| 摘要 |
PROBLEM TO BE SOLVED: To secure a high breakdown voltage for the TFTs and capacitive elements formed on the same substrate and provide a thin-film semiconductor device which can improve the capacitance of the capacitive element, and to provide an electro-optical device, and electronic equipment. SOLUTION: Since the dielectric film 2c on a TFT array substrate 10 has a 2nd region 202c whose film is thicker than a 1st region 201c outside a 1st area 1c, the breakdown voltage of the storage capacitors 70 is high. Accordingly, the storage capacitors 70 have a high breakdown voltage and can minimize the capacitance drop, when increasing the film thickness of the dielectric film 2c for a high breakdown voltage. Thus, a high breakdown voltage can be secured for the TFTs 30 and the storage capacitors 70 formed on the same substrate, and the capacitance of the storage capacitors 70 can be improved. COPYRIGHT: (C)2006,JPO&NCIPI |
