| 摘要 |
PROBLEM TO BE SOLVED: To conduct screening of memory cells having less margin in a binary signal amount distribution. SOLUTION: This semiconductor memory is provided with first and second word lines, first and second bit lines, a first memory cell which is connected to the first word line and the first bit line, a second memory cell which is connected to the second word line and the second bit line, a sense amplifier which is connected between the first and the second bit lines, a first capacitor which has a first storage electrode and a first plate electrode wherein the first storage electrode is connected to the first bit line and a second capacitor which has a second storage electrode and a second plate electrode wherein the second storage electrode is connected to the second bit line. When the first and the second bit lines are in a complementary relationship where "1" data are read to the first bit line and "0" data are read to the second bit line, the potential of the plate electrode of the second capacitor connected to the second bit line, to which the "0" data are read, is raised prior to the operation of the sense amplifier. COPYRIGHT: (C)2006,JPO&NCIPI
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