| 摘要 |
PROBLEM TO BE SOLVED: To improve cleaning effects while protecting a wafer holder in a semiconductor manufacturing device. SOLUTION: This semiconductor manufacturing device is provided with a treatment chamber, a substrate holder 8 installed in the treatment chamber, a high frequency power source 9, a treatment gas feeding means, a spectroscope 12 for acquiring the light emission intensity of each wavelength of plasma luminescence inside the treatment chamber, and an automatic control means. At the time of cleaning the treatment chamber, a cover wafer 14 configured of the sintered body of yttria, ytterbium oxide, lanthanum oxide and lutetium oxide configured by excluding the elements of silicon and aluminum is set on the substrate holder 8. Then, the plasma light emission status during cleaning is detected by the spectroscope, and a point of time when the differential value of each light emission intensity of the plasma detected by the spectroscope is turned to be 0 is defined as the end point of cleaning, and over-cleaning is carried out during a time set by the automatic control means, and a stop signal is transmitted to the high frequency power source and a flow rate control means, and cleaning is stopped. COPYRIGHT: (C)2006,JPO&NCIPI
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