| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a multilayer wiring structure capable of preventing defective through-holes caused by charge in a plasma process. SOLUTION: The method is provided for manufacturing the semiconductor device having the multilayered wiring structure. The method comprises steps of preparing a semiconductor substrate, forming a first wiring layer above the semiconductor substrate using a plasma process, forming a first conductive layer on all the surface including the first wiring layer so as to electrically short-circuit all the first wiring layer, and removing the first conductive layer through a certain method without using plasma. COPYRIGHT: (C)2006,JPO&NCIPI
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