| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition and a pattern forming method using the composition to be used for the manufacturing process of semiconductors such as an IC, manufacture of circuit boards of liquid crystal devices, thermal head or the like, and other photofabrication processes, and to provide a resist composition with improved temperature dependence of PEB (post exposure baking) and sensitivity, and a pattern forming method using the composition. <P>SOLUTION: The resist composition contains a compound having a structure with two or more monovalent anions and a structure with two or more monovalent cations in one molecule and having ≤3,000 molecular weight. The method for forming a pattern is carried out by using the composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
