发明名称 SEMICONDUCTOR DEVICE, WAFER, AND DESIGNING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To extend a process margin of wiring for vibration accompanying scanning operation of a scanning type exposure device. <P>SOLUTION: In a semiconductor device, in a wiring layer where wiring width or wiring pitch of the semiconductor device having multilayer wiring is minimum, the lengthwise direction of the wiring is superior in the amount of data (wiring frequently used) is made the same as the scanning direction of the scanning type exposure device. In other words, the influence of a shift by vibration can be suppressed to the minimum by making the direction of the vibration the same as the lengthwise direction of a pattern. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006100491(A) 申请公布日期 2006.04.13
申请号 JP20040283432 申请日期 2004.09.29
申请人 NEC ELECTRONICS CORP 发明人 MATSUBARA YOSHIHISA;KOBAYASHI HIROMASA
分类号 H01L21/82;G03F7/20;H01L21/027 主分类号 H01L21/82
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