| 摘要 |
PROBLEM TO BE SOLVED: To prevent electrical short circuit from happening between a gate and a source owing to residues of W and Ti films. SOLUTION: A vertical MOSFET 200 is constituted in such a way that a gate electrode 7 is embedded in a trench 5, and a conductor plug 11 is embedded in a contact hole 9 that passes through a source region 4 from the surface of an interlayer insulating film 8 and reaches a base region 3, and further the conductor plug 11 is electrically connected to a source electrode 12 on the interlayer insulting film 8. Gate polysilicon wiring 21 and a protective diode 22, which are covered with the interlayer insulating film 8 and electrically connected with the gate electrode 7, are embedded in recesses 25, 26. COPYRIGHT: (C)2006,JPO&NCIPI
|
