| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon-on-insulator (SOI) substrate structure and a manufacturing method thereof which are simple and cost-efficient. SOLUTION: The method for manufacturing the SOI substrate structure is provided by oxidizing porous Si having a gradient. This porous Si having the gradient is formed by first implanting a (p-type or n-type) dopant into a substrate containing Si, activating this dopant using an activating annealing step, and then anodizing this implanted and activated dopant region in a solution containing HF. This Si having the gradient has a relatively coarse upper surface layer and a fine porous layer buried directly under this upper surface layer. According to the oxidation step, the fine buried porous layer is changed into a buried oxide layer, and the coarse upper surface layer is fused into a solid Si containing over-layer due to surface migration of Si atoms. COPYRIGHT: (C)2006,JPO&NCIPI
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