发明名称 |
Apparatus for producing silicon carbide |
摘要 |
An apparatus for producing silicon carbide consisting mainly of beta -type crystal are disclosed. The fine silicon carbide consisting mainly of beta -type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600 DEG -2,100 DEG C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in Fig. 1 of the accompanying drawings.
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申请公布号 |
US4292276(A) |
申请公布日期 |
1981.09.29 |
申请号 |
US19790018939 |
申请日期 |
1979.03.09 |
申请人 |
IBIGAWA ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ENOMOTO, RYO;YOSHIOKA, MITIHIRO;YOKOYAMA, TAKAO |
分类号 |
C01B31/36;(IPC1-7):C01D1/32;H05B7/18 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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