发明名称 |
SOLID STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device which can be formed at low temperature and can ease microfabrication. SOLUTION: The solid state imaging device is provided with a photoelectric converter and a charge transfer having a charge transfer electrode to transfer charges generated in the photoelectric converter. The charge transfer electrode is formed by arranging alternately a first electrode formed of a first layer conductive film, and a second electrode formed of a second conductive film. The first and second electrodes are insulated/isolated by an electrode-to-electrode insulating film formed of a side wall insulating film that is formed through CVD method as to cover the side wall of the first electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006100367(A) |
申请公布日期 |
2006.04.13 |
申请号 |
JP20040281721 |
申请日期 |
2004.09.28 |
申请人 |
FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD |
发明人 |
KORIYAMA HIDEKI |
分类号 |
H01L27/148;H04N5/335;H04N5/369;H04N5/372 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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地址 |
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