发明名称 SOLID STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a solid state imaging device which can be formed at low temperature and can ease microfabrication. SOLUTION: The solid state imaging device is provided with a photoelectric converter and a charge transfer having a charge transfer electrode to transfer charges generated in the photoelectric converter. The charge transfer electrode is formed by arranging alternately a first electrode formed of a first layer conductive film, and a second electrode formed of a second conductive film. The first and second electrodes are insulated/isolated by an electrode-to-electrode insulating film formed of a side wall insulating film that is formed through CVD method as to cover the side wall of the first electrode. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006100367(A) 申请公布日期 2006.04.13
申请号 JP20040281721 申请日期 2004.09.28
申请人 FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD 发明人 KORIYAMA HIDEKI
分类号 H01L27/148;H04N5/335;H04N5/369;H04N5/372 主分类号 H01L27/148
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