发明名称 FORMING METHOD OF FILM PATTERN
摘要 PROBLEM TO BE SOLVED: To provide the forming method of a film pattern with which a laminated film or a connection film can easily and securely be obtained. SOLUTION: The forming method of the film pattern is provided with a bank forming process for forming a bank 35 on a substrate P in a structure where a level difference structure is arranged having a thin film 32 whose film thickness is relatively small, and a thick film 33 whose film thickness is large, and the thin film 32 is surrounded by the thick film 33; a first arranging process for arranging first function liquid 10 on a region surrounded by the thin film part 32; a drying process for drying arranged first function liquid 10, and obtaining a first function film 11; a thin film part removing process for selectively removing the thin film part 32 after the drying process; a second arranging process for arranging second function liquid on a region surrounded by a remaining bank after the thin film part 32 is removed; and a drying process for drying arranged second function liquid and obtaining a second function film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006100324(A) 申请公布日期 2006.04.13
申请号 JP20040281128 申请日期 2004.09.28
申请人 SEIKO EPSON CORP 发明人 DENDA ATSUSHI
分类号 H01L21/288;H01L21/28;H01L21/3205;H01L23/52 主分类号 H01L21/288
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