| 摘要 |
PROBLEM TO BE SOLVED: To reduce leak current generated when a depletion layer extends up to the chip end. SOLUTION: In an MOSFET 100, the trench 112 in a gate pad portion 50 and the outer circumferential portion 70 is deeper than the trench 111 in a cell region 60. A depletion layer extending in the direction of the gate pad portion 50 and the outer circumferential portion 70 from the cell region 60 is thereby interrupted through existence of the trench 112. The depletion layer is thereby terminated by the trench 112 not to reach the end of a semiconductor chip. Consequently, a leak current being generated from the cell region 60 in the end direction of the semiconductor chip is reduced. COPYRIGHT: (C)2006,JPO&NCIPI
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