| 摘要 |
PROBLEM TO BE SOLVED: To provide a new technology by which a metal oxide single crystal substrate having a straight step structure can be obtained. SOLUTION: A Bi-Cu-O-based oxide is deposited on the surface of a single crystal substrate of a metal oxide such as LaAlO<SB>3</SB>and MgO, and then the Bi-Cu-O-based oxide is liquefied at a high temperature under vacuum and converted into a flux. The flux is aggregated by subjecting the single crystal substrate to high temperature vacuum annealing by using this material. Thereafter, the flux is removed, and post annealing is optionally performed under normal pressure. Thereby, it is possible to manufacture a flat substrate in atomic level even in the case of a single crystal substrate of a metal oxide other than SrTiO<SB>3</SB>, which metal oxide cannot be manufactured as a substrate flat in atomic level by conventional methods. COPYRIGHT: (C)2006,JPO&NCIPI
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