| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that element characteristics are deteriorated by aluminum outdiffusion due to the exposure of an identification mark in a sapphire SOS substrate formed by laser irradiation. SOLUTION: An identification mark is formed on part of an SOS substrate using a sapphire layer by laser irradiation. The sapphire layer on the substrate exposed at the time of the laser irradiation is covered with an insulating film by thermal treatment using a temperature of 700°C or lower, and thereafter element formation is carried out by thermal treatment with a temperature higher than 700°C. COPYRIGHT: (C)2006,JPO&NCIPI
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