发明名称 Single-atom tip and preparation method thereof
摘要 This invention discloses an electrochemical method for the preparation of single atom tips to replace the traditional vacuum evaporation method. The invented method for preparation of single atom tips includes the following steps: A substrate single crystal metal wire etched electrochemically to form a tip. The surface of the metal tip is cleaned. A small quantity of noble metal is plated on the apex of the tip in low concentration noble metal electrolyte. Annealing in vacuum or in inert gas ambient to diffuse the additional electroplated noble metal atoms and thus a single atom tip is formed on the surface of the substrate. The present invention also discloses the single atom tip so prepared. The single atom tip of this invention has only a very small number of atoms, usually only one atom, at its apex.
申请公布号 US2006075626(A1) 申请公布日期 2006.04.13
申请号 US20040985717 申请日期 2004.10.09
申请人 ACADEMIA SINICA 发明人 HWANG ING-SHOUH;KUO HONG-SHI;TSONG TIEN T.;FU TSU-YI
分类号 C23F1/00;B23H9/00;G01Q10/00;G01Q70/16;H01S4/00 主分类号 C23F1/00
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