PRECURSOR FOR FILM DEPOSITION, METHOD FOR DEPOSITING RUTHENIUM-CONTAINING FILM, METHOD FOR DEPOSITING RUTHENIUM FILM, METHOD FOR DEPOSITING RUTHENIUM OXIDE FILM AND METHOD FOR DEPOSITING RUTHENATE FILM

摘要

PROBLEM TO BE SOLVED: To provide a precursor for film deposition which is free from the danger of explosion at the time of storage, is not decomposed even without the presence of a stabilizer, and is extremely useful for the deposition of ruthenium-containing films such as a ruthenium film. SOLUTION: The precursor for film deposition is obtained by dissolving ruthenium tetroxide into fluorine-containing ether expressed by the general formula: CxHyFzO (wherein, x, y, z have the relations of 2x+2=y+z, x=2 to 15, and z>y). COPYRIGHT: (C)2006,JPO&NCIPI