METHOD FOR DIVIDING SEMICONDUCTOR WAFER AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICES
摘要
In a semiconductor wafer including a plurality of imaginary-divided-regions which are partitioned by imaginary-dividing-lines that are respectively arranged in a grid-like arrangement on the semiconductor wafer and a circumferential line that is the outer periphery outline of the semiconductor wafer, a mask is placed so as to expose an entirety of surfaces of the wafer corresponding to respective removal-regions, the removal-regions being regions in approximately triangular form partitioned by the circumferential line of the wafer and the imaginary-dividing-lines and being some of the imaginary-divided-regions, and then plasma etching is performed on a mask placement-side surface, by which the semiconductor wafer is divided into the individual semiconductor devices along dividing lines while portions correspond to the removal-regions in the wafer are removed.
申请公布号
WO2006038699(A1)
申请公布日期
2006.04.13
申请号
WO2005JP18713
申请日期
2005.10.04
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;HAJI, HIROSHI;ARITA, KIYOSHI;NAKAGAWA, AKIRA;NODA, KAZUHIRO