A METHOD FOR SUPERCRITICAL CARBON DIOXIDE PROCESSING OF FLUORO-CARBON FILMS

摘要

A method for treating a fluoro-carbon dielectric film (4, 26) for integration of the dielectric film (4, 26) into a semiconductor device. The method includes providing a substrate (2, 22, 105) having a fluoro-carbon film (4, 26) deposited thereon, the film (4, 26) having an exposed surface (6) containing contaminants (8), and treating the exposed surface (6) with a supercritical carbon dioxide fluid to clean the exposed surface (6) of the contaminants (8) and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures (1, 20) containing a metal-containing film (12, 30) formed on the surface of the fluoro-carbon dielectric film (4, 26).