| 摘要 |
A dynamic random access memory structure is provided, each active area of a memory unit cell is distributed individually in a substrate, and deep trench patterns are designed to have a checkerboard-like arrangement in the substrate. Also, there is a constant space between each deep trench pattern in a row. Further, long bit line contact plugs are located to electrically connect active areas of two diagonally neighbor memory unit cells, and a contact hole is formed on each long bit line contact plug to enable bit lines contact the long bit line contact plugs so two diagonally neighbor memory unit cells are controlled by the same bit line.
|
