| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a junction material and a semiconductor device wherein better mechanical strength is retained even on a high temperature condition, using a joining material not including lead substantially. <P>SOLUTION: In the junction material 4, a first metal joined material 1 and a second metal joined material 2 are joined, wherein the material 2 consists of a material or materials selected from a group composed of nickel, palladium, platinum and aluminum, and a solid solution phase including the constituent element of the second metal joined material and tin exists in the cross-sectional fine structure of a joined layer 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
