RAW MATERIAL LIQUID FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND METHOD OF PRODUCING Hf-Si CONTAINING COMPLEX OXIDE FILM USING THE RAW MATERIAL LIQUID

摘要

PROBLEM TO BE SOLVED: To provide raw material liquid for metal organic chemical vapor deposition (MOCVD) having a high film-forming rate and a method of producing an Hf-Si containing complex oxide film using the raw material liquid, and also provide a method of producing an Hf-Si containing complex oxide film using the raw material liquid for MOCVD having good adhesion to an underlay. SOLUTION: The raw material liquid for MOCVD of the present invention is characterized in that it is prepared through the process of mixing an organic Si compound and organic Hf compound in a mixing ratio such that the weight ratio (organic Hf compound/organic Si compound) will be in a range of 0.001 to 0.5 weight% to dissolve the organic Hf compound into the organic Si compound and heating the resulting dissolution liquid at 20 to 100°C. COPYRIGHT: (C)2006,JPO&NCIPI