| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a small-sized magnetometric sensor utilizing a huge magnetoresistive element. <P>SOLUTION: This magnetometric sensor 10 is equipped with a single substrate 10a, normal GMR elements 11, 12 comprising respectively a spin valve film equipped with a single film fixed layer, and SAF elements 13, 14 comprising respectively a synthetic spin valve film equipped with a multilayer film-laminated fixed layer. The magnetometric sensor detects an external magnetic field by a circuit formed by full bridge connection between the normal GMR elements and the SAF elements. The normal GMR elements and the SAF elements form the huge magnetoresistive element having the magnetic detection directions different by 180 degrees by forming films constituting them on the substrate and by applying a magnetic field in the same direction to the films at a high temperature. Consequently, since the film constituting the normal GMR element and the film constituting the SAF element can be formed on mutually close positions, the small-sized magnetometric sensor can be provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
