发明名称 Method for forming a film
摘要 <p>A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.</p>
申请公布号 EP1645657(A1) 申请公布日期 2006.04.12
申请号 EP20040747551 申请日期 2004.07.08
申请人 KONICA MINOLTA HOLDINGS, INC. 发明人 II, HIROMOTO;TSUJI, TOSHIO;MAMIYA, CHIKAO;FUKUDA, KAZUHIRO;OISHI, KIYOSHI;KIYOMURA, TAKAKAZU
分类号 C23C16/455;C23C16/08;C23C16/18;C23C16/40;C23C16/44;C23C16/505;C23C16/56;H01B13/00;(IPC1-7):C23C16/44 主分类号 C23C16/455
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