| 摘要 |
An ion implantation system including a scan system for scanning an ion beam on a target wafer is provided. The ion implantation system includes a first control signal for controlling the scan system in a beam setup mode, and a second control signal for controlling the scan system in an ion implantation mode. A selection circuit selects one of the first control signal and the second control signal. A machine interface controls the selection circuit according to whether an ion implantation system is converted from the beam setup mode to the ion implantation mode. A detection device detects whether the machine interface satisfies a predetermined condition, and according to a result of the detection, a process of the ion implantation mode is decided.
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