发明名称 |
Non-volatile memory device with enlarged trapping layer |
摘要 |
Methods for making a nonvolatile memory device, such as an NROM device that has an oxide-nitride-oxide layer beneath at least one word line structure, are disclosed. The oxide-nitride-oxide layer is in the form of a plurality of oxide-nitride block structures disposed over an oxide layer, with each of the oxide-nitride block structures overlapping two adjoining bit lines. A dielectric resolution enhancement coating technique is performed to precisely control the oxide-nitride block structure dimensions.
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申请公布号 |
US7026682(B2) |
申请公布日期 |
2006.04.11 |
申请号 |
US20040769204 |
申请日期 |
2004.01.30 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHUNG CHIA-CHI |
分类号 |
H01L29/76;H01L21/336;H01L21/8246;H01L27/115 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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