| 摘要 |
A proposed non-volatile semiconductor memory and a method of manufacturing the same are directed to performing stable and highly reliable operations. First, grooves are formed in a p-type silicon semiconductor substrate, and impurity diffusion layers are formed on the bottom surfaces of the grooves. A gate insulating film is then formed on the p-type silicon semiconductor substrate. This gate insulating film has a three-layer structure in which a first insulating film made of a silicon oxide film, a charge capturing film made of a silicon nitride film, and a second insulating film made of a silicon oxide film, are laminated in this order. A gate electrode is then formed on the gate insulating film. A convexity formed by the grooves serves as the channel region of the non-volatile semiconductor memory. Even if the device size is reduced, an effective channel length can be secured in this non-volatile semiconductor memory. Thus, excellent stability and reliability can be achieved.
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