发明名称 Magnetron sputtering device
摘要 The present invention relates to a magnetron sputtering device and technique for depositing materials onto a substrate at a high production rate in which the deposited films have predictive thickness distribution and in which the apparatus can operate continuously and repeatedly for very long periods. The present invention has realized increased production by reducing cycle time. Increased coating rates are achieved by coupling a planetary drive system with a large cathode. The cathode diameter is greater than the diameter of a planet and less than twice the diameter of the planet. Lower defect rates are obtained through the lower power density at the cathode which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask.
申请公布号 US2006070877(A1) 申请公布日期 2006.04.06
申请号 US20050205398 申请日期 2005.08.17
申请人 JDS UNIPHASE CORPORATION, STATE OF INCORPORATION:DELAWARE 发明人 TILSCH MARKUS K.;SEDDON RICHARD I.;OCKENFUSS GEORG J.;HAYES JEREMY;KLINGER ROBERT E.
分类号 C23C14/00;C25B11/00 主分类号 C23C14/00
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