METHOD FOR TREATING SEMICONDUCTOR SUBSTRATES THAT ARE ANNEALED BY MEANS OF INTENSIVE LIGHT PULSES

摘要

The aim of the invention is to modify the vertical structure of the heteroepitaxial silicon carbide on silicon structures. This heteroepitaxial silicon carbide is to be annealed with the aid of light pulse irradiation. The vertical structure is to be modified in order to achieve an even melting front. To this end, the invention provides that an element that increases the melting point of the substrate is placed by ion implantation under surface of the semiconductor substrate before light pulse irradiation.