| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that dispenses with an external voltage application device by generating a high voltage in a chip, forms a gate breakdown type electric anti-fuse with a gate insulating film thickness that is the same as that of a normal transistor, and mounts the gate breakdown type electric anti-fuse or a thin-film resistance fuse for avoiding an increase in cost by a prior art. <P>SOLUTION: The semiconductor integrated circuit device comprises at least one irreversible element F00 for causing an irreversible change from a non-continuity state to a continuity state or from a continuity state to a non-continuity state by applying a voltage; a plurality of dielectric capacitors C01, C02 and C03; a means SW1 for charging each of the dielectric capacitors; a means SW2 for connecting dielectric capacitors in a direction where each charge voltage of the dielectric capacitors is added; and a means SW3 for applying the added charge voltage to the irreversible element and causing the irreversible change in the irreversible element. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
