| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a electron emitting element widely applicable to a next-generation electronic device such as an electron beam exciting display, operable with high efficiency and low voltage and easy to integrate. <P>SOLUTION: The nitride semiconductor electron emitting element and photoelectric element are provided for emitting electrons while efficiently applying a great internal electric field with spontaneous polarization or piezopolarization generated in a nitride semiconductor to the surface of the element. The element has a three-layer structure with AlGaN, AlN and GaN. An electron drawing electrode is arranged on the GaN surface of the element without using an external electrode to form an electron emitting source which is operated with low driving voltage. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
