CU ALLOY FOR SEMICONDUCTOR WIRING, METHOD FOR MANUFACTURING CU ALLOY WIRING, SEMICONDUCTOR DEVICE HAVING CU ALLOY WIRING OBTAINED BY THE MANUFACTURING METHOD, AND SPATTERING TARGET FOR FORMING CU ALLOY WIRING OF SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a Cu alloy for a semiconductor wiring, which is a Cu alloy for a wiring used for a semiconductor device and can be surely embedded to a recessed part corresponding to a wiring width even if the wiring width of a semiconductor is narrowly designed, a manufacturing method for forming a wiring made of a Cu alloy by embedding the Cu alloy for a semiconductor wiring to a recessed part provided to a semiconductor substrate, the semiconductor device having the Cu alloy wiring obtained by the manufacturing method, and a spattering target used when forming the Cu alloy wiring of a semiconductor. SOLUTION: The Cu alloy for a semiconductor wiring includes at least one kind selected from the group consisting of Sb: 0.10-10 atom%. Bi: 0.010-1.0 atom%, and Dy: 0.01-3 atom% and the balance Cu and inevitable impurities. COPYRIGHT: (C)2006,JPO&NCIPI