发明名称 |
Vertical cavity surface emitting laser with undoped top mirror |
摘要 |
A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
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申请公布号 |
US2006072639(A1) |
申请公布日期 |
2006.04.06 |
申请号 |
US20050222433 |
申请日期 |
2005.09.08 |
申请人 |
JOHNSON RALPH H;PENNER R S;BIARD JAMES R |
发明人 |
JOHNSON RALPH H.;PENNER R. S.;BIARD JAMES R. |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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