NON-VOLATILE RANDOM ACCESS MEMORY WITH SIDEWALL- FLOATING- POLYSILICON AND METHOD FOR FABRICATING THE SAME

摘要

A non-volatile memory device comprises a pair of conductive sidewall spacers (29B), for trapping/detrapping charges formed on a pair of sidewall spacers (28A). A non-volatile memory device comprises a gate insulation layer (22A) formed on a substrate (21); a gate structure (100) formed on the gate insulation layer; a pair of sidewall spacers formed on sidewalls of the gate structure; a pair of conductive sidewall spacers for trapping/detrapping charges formed on the pair of sidewall spacers; a pair of lightly doped drain regions formed in the substrate disposed below the sidewalls of the gate structure; and a pair of source/drain regions (30) formed in the substrate disposed below edge portions of the pair of conductive sidewall spacers. An independent claim is also included for a method of fabricating a non-volatile memory device, comprising forming a gate insulation layer on a substrate; forming a gate structure on the gate insulation layer; forming a pair of lightly doped drain regions in the substrate disposed below sidewalls of the gate structure; forming a pair of re-oxidation sidewall spacers (27) on sidewalls of the gate structure; simultaneously forming a pair of sidewall spacers and a pair of conductive sidewall spacers on the pair of re-oxidation sidewall spacers; and forming a pair of source/drain regions formed in the substrate disposed below edge portions of the pair of conductive sidewall spacers, and connected with the respective lightly doped drain regions.