| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems about techniques of improving performances in microfabrication of a semiconductor device using high-energy beams, X-rays, electron beams or EUV light, to provide a positive resist composition having all of satisfying high sensitivity, high resolution and preferable line edge roughness, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition contains: a resin which contains a repeating unit having at least two kinds of specified structures and which becomes soluble with an alkali developer solution by the effect of an acid, with the proportion of monomers remaining in the resin being ≤10 mass%; and (B) a compound which generates an acid by irradiation with active rays or radiation. The method for forming a pattern is carried out by using the above resist composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
