| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge waveguide-type semiconductor laser element having a high kink level in whichθ<SB>para</SB>is large. SOLUTION: In a ridge waveguide-type nitride based semiconductor laser element, when an effective refractive index difference n<SB>eff1</SB>-n<SB>eff2</SB>between an effective refractive index n<SB>eff1</SB>inside a ridge and an effective refractive index on the ridge side n<SB>eff2</SB>to an oscillation wavelength is assumed asΔn and a ridge width as W, a combination of W andΔn is defined to satisfy a formulaΔn≤-0.004×W+0.0123, W≥1.0,Δn≥0.0056 on an x-y coordinate in which W (um) is taken as an x-axis andΔn as y-axis. COPYRIGHT: (C)2006,JPO&NCIPI
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