| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a Schottky electrode having a characteristic near an ideal characteristic. SOLUTION: On the occasion of conducting etching to form a recess 107 to a GaAs substrate 101, a Ga oxide film 108 including a large amount of hydroxyl group is formed on the surface of the recess 107. This Ga oxide film 108 deteriorates characteristics of the Schottky electrode. Therefore, the hydroxyl group is removed from the Ga oxide film 108 by heating the GaAs substrate 101 by a hot plate after an etching process in order to change the Ga oxide film 108 into the Ga oxide film 109 having a higher insulation property. Thereafter, the Schottky electrode 111 is formed on the Ga oxide film 109 and the resist pattern 106 and a metal layer 110 are removed and a protection film 113 is then formed. According to this invention, since a reaction to change the hydroxyl group in the Ga oxide film 108 into water can be accelerated by heat treatment and thereby the hydroxyl group can be removed, the Schottky electrode 111 having almost ideal characteristics can be obtained. COPYRIGHT: (C)2006,JPO&NCIPI
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