ETCH BACK METHOD, METHOD FOR MANUFACTURING INORGANIC POLARIZER BY USING THIS METHOD, ETCHING STOP CONTROL DEVICE FOR REALIZING THESE METHODS, AND INORGANIC POLARIZER TO BE MANUFACTURED

摘要

PROBLEM TO BE SOLVED: To accurately control the flatness of pattern surface formed by burying and stacking a metal on a fine recessed pattern and the height of the pattern by etch-back. SOLUTION: An aluminium film 14 is stacked on the surface of a substrate 10 on which a fine grating pattern 12 is formed so as to cover the grating pattern 12, a resist layer 16 is applied to the surface of the aluminium film 14 and an aperture 18 is formed in an area of the resist layer 16 except an area in which the grating pattern 12 is formed. The resist layer 16 and the aluminium film 14 are etched back, and after prescribed set time (control time) from time that the differential value of plasma strength of plasma generated from SiF exceeds a prescribed value, etching is stopped. COPYRIGHT: (C)2006,JPO&NCIPI