发明名称 |
CROSS-POINT FERROELECTRIC MEMORY THAT REDUCES THE EFFECTS OF BIT LINE TO WORD LINE SHORTS |
摘要 |
A memory constructed from a dielectric layer sandwiched between a plurality of word conductors 4nd a plurality of bit line conductors is disclosed. The dielectric layer includes a layer of ferroelectfic material, and has first and second surfaces. The word conductors are located on the first surface. Each word conductor is connected to a corresponding word line driving circuit. The bit line 4onductors are located on the second surface. Each bit line conductor is connected to a corresponding bit line driving circuit and a corresponding sense amplifier by one or more disconnect switches. A disconnect switch is set to an open state if the bit line conductor connected tol that disconnect switch is shorted to one of the word conductors.
|
申请公布号 |
WO2006007578(B1) |
申请公布日期 |
2006.04.06 |
申请号 |
WO2005US23623 |
申请日期 |
2005.07.01 |
申请人 |
THIN FILM ELECTRONICS ASA;WOMACK, RICHARD, HIRAM |
发明人 |
WOMACK, RICHARD, HIRAM |
分类号 |
(IPC1-7):G11C29/04;G11C11/22 |
主分类号 |
(IPC1-7):G11C29/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|