| 摘要 |
In the photovoltaic devices comprising a substantially intrinsic amorphous silicon layer containing hydrogen (2) between an n-type single-crystal silicon substrate (1) and a p-type amorphous silicon layer containing hydrogen (3), the photovoltaic device according to the present invention comprises a trap layer (33) that contains less hydrogen than the intrinsic amorphous silicon layer (2) between the p-type amorphous silicon layer (3) and the intrinsic amorphous silicon layer (2). The trap layer (33) reduces hydrogen diffusion from the intrinsic amorphous silicon layer (2) to the p-type amorphous silicon layer (3). |
