发明名称 |
Method of producing multilayer interconnection structure |
摘要 |
A method of producing a buried-type multilayer interconnection structure is provided. The method comprises steps of: forming a hole portion in an insulating layer; forming a catalyst layer having average film thickness from 0.2 nm to 10 nm on a surface of the hole portion by a physical vapor deposition method; forming an electroless plating layer on the surface of the hole portion by an electroless plating method using the catalyst layer as a catalyst; and burying up the hole portion with an electrolytic plating layer by an electrolytic plating method using the electroless plating layer as a seed layer.
|
申请公布号 |
US7022598(B2) |
申请公布日期 |
2006.04.04 |
申请号 |
US20040870942 |
申请日期 |
2004.06.21 |
申请人 |
SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER |
发明人 |
SHINGUBARA SHOSO;TAKAHAGI TAKAYUKI;WANG ZENGLIN |
分类号 |
C23C18/18;H01L21/4763;C23C14/14;C23C18/31;C25D7/06;H01L21/288;H01L21/768 |
主分类号 |
C23C18/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|