| 摘要 |
An optically pumped semiconductor laser device having a substrate ( 12 ) having a first main area ( 14 ) and a second main area ( 16 ), a pump laser ( 30 ) and a vertically emitting laser ( 40 ) optically pumped by the pump laser ( 30 ) being arranged on the first main area ( 14 ). The first main area ( 14 ) of the substrate ( 12 ) is patterned and has first regions ( 20 ) situated at a higher level and also second regions ( 18 ) situated at a lower level. The pump laser ( 30 ) is arranged on a region ( 20 ) situated at a higher level of the substrate ( 12 ), and the vertically emitting laser ( 40 ) is arranged above intermediate layers ( 50, 30 ') on a region ( 18 ) situated at a lower level of the substrate ( 12 ). The height difference (Delta) between the first ( 20 ) and second ( 18 ) regions of the substrate ( 12 ) and the layer thickness of the intermediate layers ( 50, 30 ') is chosen in such a way that the pump laser ( 30 ) and the vertically emitting laser ( 40 ) are situated at the same level. A substrate which is patterned in this way enables semiconductor layers of the pump laser and of the vertically emitting laser to be applied together in a single epitaxy step.
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