| 发明名称 |
Pattern formation method |
| 摘要 |
Pattern exposure is performed by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure energy of 5 mJ/cm<SUP>2 </SUP>or less. After the pattern exposure, the resist film is developed so as to form a resist pattern.
|
| 申请公布号 |
US7022466(B2) |
申请公布日期 |
2006.04.04 |
| 申请号 |
US20030351308 |
申请日期 |
2003.01.27 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ENDO MASAYUKI;SASAGO MASARU |
| 分类号 |
G03F7/20;G03F7/039;H01L21/027 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
