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发明名称
深沟渠之制备方法及其蚀刻混合液
摘要
本发明之深沟渠之制备方法首先利用乾蚀刻技术在一矽基板之中形成一沟渠,接着涂布一蚀刻混合液于该矽基板表面及该沟渠之中。然后去除在该沟渠一预定深度以上之蚀刻混合液,并利用保留在该沟渠中之蚀刻混合液进行一蚀刻制程,以蚀刻该预定深度以下之矽基板而形成一深沟渠。该蚀刻混合液包含一输送溶液及一蚀刻剂,且该输送溶液之黏度大于该蚀刻剂之黏度。该输送溶液可为旋涂式玻璃或光阻,而该蚀刻剂可为四甲基氢氧化铵、氨水或氢氟酸,其中该输送溶液与该蚀刻剂之体积比例系介于50:1至20:1之间。
申请公布号
TW200611324
申请公布日期
2006.04.01
申请号
TW093128117
申请日期
2004.09.16
申请人
茂德科技股份有限公司
发明人
郑孟芬;柏雅玲;王廷熏
分类号
H01L21/30
主分类号
H01L21/30
代理机构
代理人
王仲
主权项
地址
新竹市科学工业园区力行路19号3楼
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