| 摘要 |
PROBLEM TO BE SOLVED: To provide a charge capture semiconductor memory device whose size is further reduced. SOLUTION: A memory cell is preferably formed by a cylindrical recess (2), in a main surface of a semiconductor substrate (1) and is provided with a memory layer sequence (3) and a gate electrode (4) in a sidewall. An upper source/drain region (5) and a lower source/drain region (6) which are connected in a queue to a first bit line (8), and a second bit line (9) are provided. A word line (10) is arranged on the upper part of the first bit line (8), and the second bit line (9) and is connected to a row of the gate electrode (4). A transistor structure in the vertical direction facilitates further miniaturization of cells and enables making desired minimum effective channel length. COPYRIGHT: (C)2006,JPO&NCIPI
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