| 摘要 |
PROBLEM TO BE SOLVED: To provide a patch for a single-crystal ingot capable of preventing the occurrence of disconnection of a wire due to the thinning of a wire and the grain fining of abrasive grains. SOLUTION: A semiconductor wafer is cut from an ingot I by using a wire saw while respectively abutting the patches 14 to both end faces of the columnar ingot I. The patch 14 is a nearly rectangular glass plate in which its abutting face has the long side extended in the cutting direction of the wire saw and the short side extended in the direction orthogonal to the cutting direction of the wire saw. The patch is formed such that the length of the long side is nearly equal to the diameter of the ingot I and the length of the short side is smaller than the diameter of the ingot I. By this configuration, a contact area of the patch 14 and the wire can be reduced compared with a conventional columnar patch 14 having the same diameter as the ingot. Consequently, a load to the wire 11 can be reduced. The disconnection of the wire can be reduced without applying a load to the wire 11 even when finely-grained loose abrasive grains are used. COPYRIGHT: (C)2006,JPO&NCIPI |
