| 摘要 |
A method to fill a valley on a substrate comprises depositing a first material onto the substrate using a chemical vapor deposition process to partially fill the valley and depositing a second material onto the substrate using a spin-on deposition process to completely fill the valley. The chemical vapor deposition process may comprise a high-density plasma chemical vapor deposition process or a low-pressure chemical vapor deposition process. The method may further comprise depositing a sacrificial layer, performing a first curing process on the first and second materials, polishing at least the sacrificial layer to remove at least a portion of the second material, and performing a second curing process on the first and second materials.
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