发明名称 MULTIWAVELENGTH LASER DIODE
摘要 PROBLEM TO BE SOLVED: To provide a multiwavelength laser diode, in which a metal reflective layer is formed in order to simplify a fabrication process thereof as well as enhance productivity, and which has a high reflectivity uniformly in a multiwavelength range. SOLUTION: A multiwavelength laser diode comprises: an oscillating structure which consists of a semiconductor substrate, a lower cladding layer, an active layer, and an upper cladding layer having a ridge, in which the layers are sequentially formed on the semiconductor substrate; a first metal layer which is made of a metal having a high reflectivity in a high wavelength range including a predetermined wavelength and higher and is formed on a first side face of the oscillating structure on one end side of the ridge; and a second metal layer which is made of a metal having a high reflectivity in a low wavelength range lower than the predetermined wavelength and is formed on the first metal layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006086487(A) 申请公布日期 2006.03.30
申请号 JP20040372369 申请日期 2004.12.22
申请人 SAMSUNG ELECTRO-MECHANICS CO LTD 发明人 JANG TAE SUNG;CHOI HEE SEOK;CHO SANG DEOG;JEON DONG MIN
分类号 H01S5/028;H01S5/22 主分类号 H01S5/028
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