发明名称 |
Method of cleaning a film-forming apparatus and film-forming apparatus |
摘要 |
A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
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申请公布号 |
US2006065289(A1) |
申请公布日期 |
2006.03.30 |
申请号 |
US20050234105 |
申请日期 |
2005.09.26 |
申请人 |
TAMAOKI NAOKI;SATO YUUSUKE;SONOBE JUN;SHIGEMOTO TAKAMITSU;KIMURA TAKAKO |
发明人 |
TAMAOKI NAOKI;SATO YUUSUKE;SONOBE JUN;SHIGEMOTO TAKAMITSU;KIMURA TAKAKO |
分类号 |
C23G1/00;C23C16/00 |
主分类号 |
C23G1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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