| 摘要 |
<p>A high resolution photoresist process, especially for the production of semiconductors with structures smaller than 50 nm uses radiant heating applied to the upper surface of the resist rather than thermal contact. This applies the heat direct to the resist without thermal lag through the substrate. The heating is applied to dry the resist and/or as a post exposure bake. Suitable thermal sources include IR lasers. The heating is applied for 5 to 180 seconds to generate a temperature of between 120 and 140 deg. C in the resist, with the substrate moved under the heating area at a set speed.</p> |
