Nonvolatile memory device e.g. flash memory device, programming method, involves determining whether data is correctly programmed into set of memory cells based on evaluation of threshold voltage distributions of memory cells

摘要

The method involves programming data into a set of memory cells of a nonvolatile memory device, and simultaneously programming confirmation information associated with the programmed data into the memory cells. A determination is made whether the data is correctly programmed into the set of memory cells based on an evaluation of threshold voltage distributions of the memory cells. An independent claim is also included for a method of resuming a data programming operation in a nonvolatile memory device after an interruption.